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| Datasheet File OCR Text: |
| PROCESS Small Signal Transistor CP305 NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 11,212 PRINCIPAL DEVICE TYPES 2N3019 CMPT3019 CXT3019 CZT3019 EPITAXIAL PLANAR 31 x 31 MILS 9.0 MILS 5.9 x 11.8 MILS 6.5 x 13.8 MILS Al - 30,000A Au - 18,000A R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP305 Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m |
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